Electrical performance of phase change memory cells with Ge3Sb2Te6 deposited by molecular beam epitaxy
Author:
Affiliation:
1. Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany
2. Micron Semiconductor Italia S.r.l., Via C. Olivetti, 2, 20864, Agrate Brianza, MB, Italy
Funder
European Commission (EC)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4906060
Reference20 articles.
1. Phase Change Materials and Their Application to Nonvolatile Memories
2. Phase-change materials for rewriteable data storage
3. Phase change memory technology
4. Reliability Study of Phase-Change Nonvolatile Memories
5. Chemical vapor deposition of chalcogenide materials for phase-change memories
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