Surface-potential-modulated piezoresistive effect of core–shell 3C-SiC nanowires

Abstract

Abstract The effect of surface potential on the carrier mobility and piezoresistance of core–shell silicon carbide nanowires (SiC NWs) was investigated to realize small and sensitive SiC-microelectromechanical systems sensors. The p-type cubic crystalline SiC (3C-SiC) NWs were synthesized via the vapor–liquid–solid method and coated with silicon dioxide (SiO2) or aluminum oxide (Al2O3) dielectric shells to form core–shell structured NWs with different surface potentials. Four-point bending devices (FBDs) with a field-effect transistor (FET) configuration integrating a single core–shell 3C-SiC NW as the FET channel were fabricated to apply an additional electric field and strain to the core–shell 3C-SiC NWs. The fixed oxide charge densities of the SiO2 and Al2O3 shells showed positive and negative values, respectively, which were equivalent to electric fields of the order of several hundred thousand volt per centimeter in absolute values. In the core–shell 3C-SiC NWs with originally low impurity concentrations, the electric field induced by the fixed oxide charge of the shells can determine not only the electrical conduction but also the charge carriers in the NWs. Bending tests using the FBDs showed that the piezoresistive effect of the SiO2-coated NW was almost the same as that of the as-grown 3C-SiC NW reported previously, regardless of the gate voltage, whereas that of the Al2O3-coated NW was considerably enhanced at negative gate voltages. The enhancement of the piezoresistive effect was attributed to the piezo-pinch effect, which was more pronounced in the NW, where the carrier density at the core–shell interface is enhanced by the electric field of the dielectric.