A review of silicon carbide development in MEMS applications-Reference-Cited by-同舟云学术

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A review of silicon carbide development in MEMS applications

Published:2009 Issue:3/4 Volume:2 Page:227
ISSN:1753-3465
Container-title:International Journal of Computational Materials Science and Surface Engineering
language:en
Short-container-title:IJCMSSE

Author:

Jiang Liudi,Cheung Rebecca

Publisher

Inderscience Publishers

Subject

Computer Science Applications,General Engineering,General Materials Science,Modeling and Simulation

Cited by 74 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of damage mechanism on single crystal 4H-SiC surface layer by picosecond laser modification (PLM);Applied Surface Science;2024-11

2. Application of bulk silicon carbide technology in high temperature MEMS sensors;Materials Science in Semiconductor Processing;2024-04

3. Changing torque-force synchronization condition for abrasive particle improves material removal during silicon carbide abrasive machining;Tribology International;2024-04

4. Large thermoelectric effects in p-SiC/p-Si and n-SiC/p-Si heterojunctions;Materials Today Communications;2024-03

5. Tailoring the Mechanical Properties of X–C–Si (X = Al, Mg) Alloys for Aerospace and Automotive Industries: An ab Initio Study;Science of Advanced Materials;2024-02-01

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