High performance tunnel field effect transistors based on in-plane transition metal dichalcogenide heterojunctions
Author:
Publisher
IOP Publishing
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering
Link
http://iopscience.iop.org/article/10.1088/1361-6528/aae7df/pdf
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1. A review of selected topics in physics based modeling for tunnel field-effect transistors
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5. Barrier-Engineered Arsenide–Antimonide Heterojunction Tunnel FETs With Enhanced Drive Current
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