A review of selected topics in physics based modeling for tunnel field-effect transistors-Reference-Cited by-同舟云学术

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A review of selected topics in physics based modeling for tunnel field-effect transistors

Published:2017-07-11 Issue:8 Volume:32 Page:083005
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Esseni David,Pala Marco,Palestri Pierpaolo,Alper Cem,Rollo Tommaso

Funder

European Community

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/32/i=8/a=083005/pdf

Reference178 articles.

1. Design of ion-implanted MOSFET's with very small physical dimensions

2. Generalized scaling theory and its application to a ¼ micrometer MOSFET design

3. Low-power CMOS digital design

4. Technologies for Ultradynamic Voltage Scaling

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