In-situthermal annealing of on-membrane silicon-on-insulator semiconductor-based devices after high gamma dose irradiation
Author:
Publisher
IOP Publishing
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering
Link
http://stacks.iop.org/0957-4484/28/i=18/a=184001/pdf
Reference16 articles.
1. High temperature and radiation hard CMOS SOI sub-threshold voltage reference
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3. Radiation effects in advanced SOI devices: New insights into Total Ionizing Dose and Single-Event Effects
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5. Model for Radiation‐Induced Charge Trapping and Annealing in the Oxide Layer of MOS Devices
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