Repairable Polymer Solid Electrolyte Gated MoS 2 Field Effect Devices with Large Radiation Tolerance-Reference-Cited by-同舟云学术

Repairable Polymer Solid Electrolyte Gated MoS 2 Field Effect Devices with Large Radiation Tolerance

Published:2021-09-24 Issue:1 Volume:8 Page:2100619
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv Elect Materials

Author:

Chen Di¹²,Li Jiankun¹,Wei Zheng¹³,Wei Xinjian¹²,Zhu Maguang⁴,Liu Jing¹,Zhang Guangyu³,Zhang Zhiyong⁴,Chen Jian‐Hao¹²⁴⁵^ORCID

Affiliation:

1. Beijing Academy of Quantum Information Sciences Beijing 100193 China

2. International Center of Quantum Material School of Physics Peking University Beijing 100871 China

3. Institute of Physics Chinese Academy of Sciences Beijing 100190 China

4. Key Laboratory for the Physics and Chemistry of Nanodevices Peking University Beijing 100871 China

5. Interdisciplinary Institute of Light‐Element Quantum Materials and Research Center for Light‐Element Advanced Materials Peking University Beijing 100871 China

Funder

Beijing Municipal Natural Science Foundation

National Natural Science Foundation of China

National Key Research and Development Program of China

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202100619

Reference63 articles.

1. Evolution of Total Ionizing Dose Effects in MOS Devices With Moore’s Law Scaling

2. b) H.Hughes P.McMarr M.Alles E.Zhang C.Arutt B.Doris D.Liu R.Southwick P.Oldiges Total Ionizing Dose Radiation Effects on 14 nm FinFET and SOI UTBB Technologies Conference Record of the IEEE Radiation Effects Data Workshop (REDW) IEEE Boston MA2015.

3. P. V.Dressendorfer J.Mazur J.Schwank T.Weatherford C.Poivey Radiation Effects ‐ From Particles to Payloads Short Course Notebook of the IEEE Nuclear and Space Radiation Effects Conference IEEE/NPSS Radiation Effects Committee Phoenix AZ2002.

4. Radiation-hard design for SOI MOS inverters

5. Evaluating Architectural, Redundancy, and Implementation Strategies for Radiation Hardening of FinFET Integrated Circuits

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Gamma-Irradiation-Induced Electrical Characteristic Variations in MoS2 Field-Effect Transistors with Buried Local Back-Gate Structure;Nanomaterials;2024-08-07

2. Calcium Alginate as an Active Device Component for Light-Triggered Degradation of 2D MoS₂-Based Transient Electronics;ACS Applied Materials & Interfaces;2024-07-18

3. 2DMaterials for Space Use;Two‐Dimensional Materials for Nonlinear Optics;2023-09-29

4. Designing and Reliability Analysis of Radiation Hardened Stacked Gate Junctionless FinFET and CMOS Inverter;IEEE Transactions on Device and Materials Reliability;2023-06

5. Radiation Resilient Two-Dimensional Electronics;ACS Applied Materials & Interfaces;2023-05-26