Growth mode evolution during (100)-oriented β-Ga2O3 homoepitaxy
Author:
Publisher
IOP Publishing
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering
Link
http://iopscience.iop.org/article/10.1088/1361-6528/aad21b/pdf
Reference27 articles.
1. Ga2O3Thin Film Growth onc-Plane Sapphire Substrates by Molecular Beam Epitaxy for Deep-Ultraviolet Photodetectors
2. 3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3MOSFETs
3. $\beta$ -Ga2O3 MOSFETs for Radio Frequency Operation
4. Morphology and Electrical Properties of Pure and Ti-Doped Gas-Sensitive Ga2O3 Film Prepared by Rheotaxial Growth and Thermal Oxidation
5. Polymorphism of Ga2O3 and the System Ga2O3—H2O
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