Fabrication of AlGaN nanostructures by nanolithography on ultraviolet LEDs grown on Si substrates-Reference-Cited by-同舟云学术

Fabrication of AlGaN nanostructures by nanolithography on ultraviolet LEDs grown on Si substrates

Published:2019-02-19 Issue:18 Volume:30 Page:185201
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Ma Chuanfei^ORCID,Feng Meixin,Wang Jin^ORCID,Zhou Rui,Sun Qian,Liu Jianxun,Huang Yingnan,Gao Hongwei,Zhou Yu,Yang Hui

Funder

National Natural Science Foundation of China

National Key R&D Program

Key Frontier Scientific Research Program of the Chinese Academy of Sciences

Science and Technology Service Network Initiative of the Chinese Academy of Sciences, the CAS Interdisciplinary Innovation Team, the Key R&D Program of Jiangsu Province

the Natural Science Foundation of Jiangsu Province

Natural Science Foundation of Jiangxi Province

State Key Laboratory of Integrated Optoelectronics

Suzhou Science and Technology Program

open fund of the State Key Laboratory of Reliability and Intelligence of Electrical Equipment

China Postdoctoral Science Foundation

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://iopscience.iop.org/article/10.1088/1361-6528/aafd3d/pdf

Reference33 articles.

1. Ultralow-threshold electrically injected AlGaN nanowire ultraviolet lasers on Si operating at low temperature

2. Enhancing the light extraction efficiency of AlGaN deep ultraviolet light emitting diodes by using nanowire structures

3. Enhancing light coupling and emission efficiencies of AlGaN thin film and AlGaN/GaN multiple quantum wells with periodicity-wavelength matched nanostructure array

4. Enhanced luminescence from GaN nanopillar arrays fabricated using a top-down process

5. Mesopic color reproduction

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2. Ultraviolet optoelectronic devices based on AlGaN-SiC platform: Towards monolithic photonics integration system;Nano Energy;2020-11

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4. Crack-free high quality 2 μm-thick Al0.5Ga0.5N grown on a Si substrate with a superlattice transition layer;CrystEngComm;2020

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