Strain-free GeSn nanomembranes enabled by transfer-printing techniques for advanced optoelectronic applications-Reference-Cited by-同舟云学术

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Strain-free GeSn nanomembranes enabled by transfer-printing techniques for advanced optoelectronic applications

Published:2020-08-13 Issue:44 Volume:31 Page:445301
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Tai Yeh-Chen,Yeh Po-Lun,An Shu,Cheng Hung-Hsiang,Kim Munho^ORCID,Chang Guo-En^ORCID

Funder

Ministry of Education of Taiwan

Nanyang Technological University

Ministry of Science and Technology, Taiwan

ministry of education of Singapore

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

https://iopscience.iop.org/article/10.1088/1361-6528/aba6b1/pdf

Reference47 articles.

1. The Past, Present, and Future of Silicon Photonics

2. Silicon-based silicon–germanium–tin heterostructure photonics

3. Theory for n-type doped, tensile-strained Ge–Si_xGe_ySn_1−x−y quantum-well lasers at telecom wavelength

4. Direct-gap Ge/GeSn/Si and GeSn/Ge/Si heterostructures

5. Increased photoluminescence of strain-reduced, high-Sn composition Ge1−xSnx alloys grown by molecular beam epitaxy

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study on the periodic structure of polycrystalline GeSn prepared by femtosecond pulse laser direct writing;Optics & Laser Technology;2023-12

2. Nanomembranes-Affiliated Water Remediation: Chronology, Properties, Classification, Challenges and Future Prospects;Membranes;2023-08-01

3. Transfer-printing-enabled GeSn flexible resonant-cavity-enhanced photodetectors with strain-amplified mid-infrared optical responses;Nanoscale;2023

4. Recent advances in single crystal narrow band-gap semiconductor nanomembranes and their flexible optoelectronic device applications: Ge, GeSn, InGaAs, and 2D materials;Journal of Materials Chemistry C;2023

5. Improved Tunneling Property of p+Si Nanomembrane/n+GaAs Heterostructures through Ultraviolet/Ozone Interface Treatment;Inorganics;2022-11-28

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