Preparation of non-oxidized Ge quantum dot lattices in amorphous Al2O3, Si3N4 and SiC matrices-Reference-Cited by-同舟云学术

Preparation of non-oxidized Ge quantum dot lattices in amorphous Al2O3, Si3N4 and SiC matrices

Published:2019-05-24 Issue:33 Volume:30 Page:335601
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Nekić Nikolina,Šarić Iva^ORCID,Salamon Krešimir^ORCID,Basioli Lovro^ORCID,Sancho-Parramon Jordi,Grenzer Jörg,Hübner René,Bernstorff Sigrid,Petravić Mladen^ORCID,Mičetić Maja^ORCID

Funder

Center of Excellence for Advanced Materials and Sensing Devices

German Federal Ministry of Education of Research

Hrvatska Zaklada za Znanost

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://iopscience.iop.org/article/10.1088/1361-6528/ab1d3c/pdf

Reference32 articles.

1. Silicon nanocrystals in carbide matrix

2. Charge transport in Si nanocrystal/SiO2 superlattices

3. Highly efficient CdS-quantum-dot-sensitized GaAs solar cells

4. Semiconductor Nanocrystal Quantum Dots as Solar Cell Components and Photosensitizers: Material, Charge Transfer, and Separation Aspects of Some Device Topologies

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