High-energy ion (He+, Si++, Ga+, Au++) interactions with PMMA in ion beam lithography

Abstract

Abstract Resist-based ion beam lithography has been studied by exposing different species of ions (He+, Si++, Ga+ and Au++) on 700 and 2000 Å thick poly(methyl methacrylate) (or PMMA) films supported on Si substrates. By comparing the resist sensitivities to different ions and the cross-sectional shapes of the developed features with the simulation outputs from the TRIM (TRansport of Ions in Matter) software, long-chain scissoring in PMMA can be largely attributed to ion-initiated electron cascades (as evaluated by ion energy loss to the electrons) and recoil atom cascades (as evaluated by vacancy distribution in TRIM). The ion-initiated electron cascades contribute more to the resist sensitivity for the lighter ions, while the recoil atom cascades are more important for the heavier ions. A proportional relation between the resist sensitivity and the product of the ion energy loss to electrons and vacancy number is obtained semi-empirically for heavy ions. The He+ ion is the only ion species that can travel through and therefore expose the entire 2000-Å thick PMMA resist film, while the heaviest ion, Au++, provides the highest resist sensitivity. The effective energy and momentum impartment to the resist by the ion, as revealed by recoil atom cascades and vacancy formation, is important to significantly expanding the material types suitable for ion beam lithography.