Flexible resistive random access memory devices by using NiO x /GaN microdisk arrays fabricated on graphene films-Reference-Cited by-同舟云学术

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Flexible resistive random access memory devices by using NiO x /GaN microdisk arrays fabricated on graphene films

Published:2017-04-21 Issue:20 Volume:28 Page:205202
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Lee Keundong,Park Jong-woo,Tchoe Youngbin,Yoon Jiyoung,Chung Kunook,Yoon Hosang,Lee Sangik,Yoon Chansoo,Ho Park Bae,Yi Gyu-Chul

Funder

National Research Foundation of Korea

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/28/i=20/a=205202/pdf

Reference16 articles.

1. Transferable GaN Layers Grown on ZnO-Coated Graphene Layers for Optoelectronic Devices

2. Flexible Inorganic Nanostructure Light-Emitting Diodes Fabricated on Graphene Films

3. Layered boron nitride as a release layer for mechanical transfer of GaN-based devices

4. Inorganic Semiconductors for Flexible Electronics

5. Wafer-Scale Synthesis and Transfer of Graphene Films

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