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High resolution front-side visualization of charge stored in EEPROM with scanning nonlinear dielectric microscopy (SNDM)

  • Published:2021-09-07 Issue:48 Volume:32 Page:485201
  • ISSN:0957-4484
  • Container-title:Nanotechnology
  • language:
  • Short-container-title:Nanotechnology

Author:

Zeng X MORCID,Liu Q,Tay J Y,Chew K Y,Cheah J,Gan C L

Funder

National Research Foundation Singapore

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Reference14 articles.

1. Forensic data recovery from flash memory;Breeuwsma;Small Scale Digital Device Dorensics J.,2007

2. Physical inspection attacks: new frontier in hardware security;Rahman,2018

3. A survey on chip to system reverse engineering;Quadir;J. Emerg. Technol. Comput. Syst.,2016

4. Direct charge measurements to read back stored data in nonvolatile memory devices using scanning capacitance microscopy;Dhar;J. Vac. Sci. Technol. B,2013

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1. A Comprehensive Data Retrieval and Correction Approach From 40-nm Flash Memory With Selective Chemical Engraving;IEEE Transactions on Information Forensics and Security;2024

2. Methodology of backside preparation applied on a MRAM to lead a logical investigation with a near-field probe;Microelectronics Reliability;2023-11

3. Security Evaluation of Microcontrollers: A Case Study in Smart Watches;2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA);2023-07-24

4. Embedded-EEPROM descrambling via laser-based techniques – A case study on AVR MCU;2022 Workshop on Fault Detection and Tolerance in Cryptography (FDTC);2022-09

5. Selective Staining on Non-Volatile Memory Cells for Data Retrieval;IEEE Transactions on Information Forensics and Security;2022
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