A Comprehensive Data Retrieval and Correction Approach From 40-nm Flash Memory With Selective Chemical Engraving
Author:
Affiliation:
1. Temasek Laboratories@NTU, Nanyang Technological University, Jurong West, Singapore
2. Temasek Laboratories@NTU and the School of Materials Science and Engineering, Nanyang Technological University, Jurong West, Singapore
Funder
National Research Foundation, Singapore, through its National Cybersecurity Research and Development Programme
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Computer Networks and Communications,Safety, Risk, Reliability and Quality
Link
http://xplorestaging.ieee.org/ielx7/10206/10319981/10296963.pdf?arnumber=10296963
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3. Reverse Engineering Flash EEPROM Memories Using Scanning Electron Microscopy
4. Direct measurements of charge in floating gate transistor channels of dlash memories using scanning capacitance microscopy;denardi;Proc ISTFA,2006
5. A review of emerging non-volatile memory (NVM) technologies and applications
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