Passivation of SiC device surfaces by aluminum oxide
Author:
Publisher
IOP Publishing
Subject
General Medicine
Link
http://stacks.iop.org/1757-899X/56/i=1/a=012007/pdf
Reference34 articles.
1. Surface passivation oxide effects on the current gain of 4H-SiC bipolar junction transistors
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4. Analysis of the electron traps at the 4H-SiC/SiO2 interface using combined CV/thermally stimulated current measurements
5. Studies of NO on 4H-SiC(0001) using synchrotron radiation
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1. Towards aluminum oxide/aluminum nitride insulating stacks on 4H–SiC by atomic layer deposition;Materials Science in Semiconductor Processing;2024-05
2. Adhesion and electronic properties of 4H-SiC/α-Al2O3 interfaces with different terminations calculated via first-principles methods;Surfaces and Interfaces;2023-10
3. Enhanced electrical properties of 4H-SiC/Al2O3 heterojunction by PEALD in situ NH3-plasma passivation;Applied Physics A;2022-09-30
4. High-k dielectrics for 4H-silicon carbide: present status and future perspectives;Journal of Materials Chemistry C;2021
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