Mechanisms of epitaxial growth of SiC films by the method of atom substitution on the surfaces (100) and (111) of Si single crystals and on surfaces of Si films grown on single crystals Al2O3
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Published:2018-07
Issue:
Volume:387
Page:012044
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ISSN:1757-8981
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Container-title:IOP Conference Series: Materials Science and Engineering
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language:
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Short-container-title:IOP Conf. Ser.: Mater. Sci. Eng.
Author:
Kukushkin S A,Osipov A V
Cited by
3 articles.
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