Domain-sensitive in situ observation of layer-by-layer removal at Si(100) in H2 ambient
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1367-2630/15/i=11/a=113049/pdf
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1. Si (001) surface preparation for the antiphase domain free heteroepitaxial growth of GaP on Si substrate
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3. GaP-nucleation on exact Si (001) substrates for III/V device integration
4. In situaccess to the dielectric anisotropy of buried III-V/Si(100) heterointerfaces
5. Nucleation-related defect-free GaP/Si(100) heteroepitaxy via metal-organic chemical vapor deposition
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