GaN/AlGaN intersubband optoelectronic devices-Reference-Cited by-同舟云学术

GaN/AlGaN intersubband optoelectronic devices

Published:2009-12-17 Issue:12 Volume:11 Page:125023
ISSN:1367-2630
Container-title:New Journal of Physics
language:
Short-container-title:New J. Phys.

Author:

Machhadani H,Kandaswamy P,Sakr S,Vardi A,Wirtmüller A,Nevou L,Guillot F,Pozzovivo G,Tchernycheva M,Lupu A,Vivien L,Crozat P,Warde E,Bougerol C,Schacham S,Strasser G,Bahir G,Monroy E,Julien F H

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Reference59 articles.

1. First observation of an extremely large‐dipole infrared transition within the conduction band of a GaAs quantum well

2. Quantum Cascade Laser

3. Systematic experimental and theoretical investigation of intersubband absorption inGaN∕AlNquantum wells

4. Optical and structural properties of III-V nitrides under pressure

5. Feasibility Study on Ultrafast Nonlinear Optical Properties of 1.55-µ m Intersubband Transition in AlGaN/GaN Quantum Wells

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