Author:
Klanner R,Martens S,Schwandt J,Vauth A
Abstract
Abstract
The transmission of silicon crystals irradiated by 24 GeV/c protons and reactor neutrons has been measured for photon energies, E
γ
, between 0.95 and 1.3 eV. From the transmission data the absorption coefficient α is calculated, and from α(E
γ
) the fluence dependence of the band-gap energy, E
gap, and the energy of transverse optical phonons, E
ph, determined. It is found that within the experimental uncertainties of about 1 meV neither E
gap nor E
ph depend on fluence up to the maximum fluence of 1 × 1017 cm−2 of the measurements. The value of E
gap agrees within about 1 meV with the generally accepted value, if an exciton-binding energy of 15 meV is assumed. A similar agreement is found for E
ph. For the extraction of E
gap and E
ph the second derivative of
α
(
E
γ
)
smoothed with a Gaussian kernel has been used.
Funder
DFG Excellence Initiative
PIER—DESY and University of Hamburg
Subject
General Physics and Astronomy
Cited by
1 articles.
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1. Study of the V20 state in neutron-irradiated silicon using photon-absorption measurements;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2023-08