Influence of radiation damage on the absorption of near-infrared light in silicon-Reference-Cited by-同舟云学术

Influence of radiation damage on the absorption of near-infrared light in silicon

Published:2020-07 Issue: Volume:968 Page:163955
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Scharf C.,Feindt F.,Klanner R.

Funder

HGF, Germany

H2020 project

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference23 articles.

2. Radiation Damage of Highly Irradiated Silicon Sensors;Scharf,2018

3. Edge-TCT for the Investigation of Radiation Damaged Silicon Strip Sensors;Feindt,2017

5. www.agilent.com.

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