Absorption coefficients of silicon: A theoretical treatment
Author:
Affiliation:
1. Department of Applied Physics, National University of Kaohsiung, 700 Kaohsiung University Rd., Nanzih District, Kaohsiung 811, Taiwan
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5028053
Reference19 articles.
1. B. K. Ridley , Quantum Processes in Semiconductors, 4th ed. ( Oxford University Press, Oxford, 1990), pp. 193–197.
2. Absorption coefficient of silicon for solar cell calculations
3. Self-consistent optical parameters of intrinsic silicon at 300K including temperature coefficients
4. Optical properties of intrinsic silicon at 300 K
5. Fine Structure in the Absorption-Edge Spectrum of Si
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