Ni+-irradiated InGaAs/GaAs quantum wells: picosecond carrier dynamics-Reference-Cited by-同舟云学术

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Ni+-irradiated InGaAs/GaAs quantum wells: picosecond carrier dynamics

Published:2005-05-24 Issue: Volume:7 Page:131-131
ISSN:1367-2630
Container-title:New Journal of Physics
language:
Short-container-title:New J. Phys.

Author:

Dhaka V D S,Tkachenko N V,Pavelescu E-M,Lemmetyinen H,Hakkarainen T,Guina M,Konttinen J,Okhotnikov O,Pessa M,Arstila K,Keinonen J

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Reference18 articles.

1. Ultrafast response (∼2.2 ps) of ion-irradiated InGaAs photoconductive switch at 1.55 μm

2. Ion-implanted InGaAs single quantum well semiconductor saturable absorber mirrors for passive mode-locking

3. Ultra-fast fibre laser systems based on SESAM technology: new horizons and applications

4. Highly resistive annealed low-temperature-grown InGaAs with sub-500fs carrier lifetimes

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mode-locked semiconductor disk lasers with weakly saturated absorbers;Optics Communications;2012-05

2. Ultrafast dynamics of Ni+-irradiated and annealed GaInAs/InP multiple quantum wells;Journal of Physics D: Applied Physics;2006-06-16

3. Room-temperature self-annealing of heavy-ion-irradiated InGaAs∕GaAs quantum wells;Electronics Letters;2005

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