Ultrafast dynamics of Ni+-irradiated and annealed GaInAs/InP multiple quantum wells-Reference-Cited by-同舟云学术

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Ultrafast dynamics of Ni+-irradiated and annealed GaInAs/InP multiple quantum wells

Published:2006-06-16 Issue:13 Volume:39 Page:2659-2663
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Dhaka V D S,Tkachenko N V,Lemmetyinen H,Pavelescu E-M,Suomalainen S,Pessa M,Arstila K,Nordlund K,Keinonen J

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/39/i=13/a=004/pdf

Reference20 articles.

1. Recovery dynamics in proton-bombarded semiconductor saturable absorber mirrors

2. Ultrafast hot-carrier dynamics in semiconductor saturable absorber mirrors

3. High fluence ultrafast dynamics of semiconductor saturable absorber mirrors

4. Dilute nitride saturable absorber mirrors for optical pulse generation

5. Temperature dependence of the absorption saturation relaxation time in light- and heavy-ion-irradiated bulk GaAs

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1. Defect clustering in irradiation of GaN by single and molecular ions;Vacuum;2014-07

2. Effects of defect clustering on optical properties of GaN by single and molecular ion irradiation;Journal of Applied Physics;2013-11-14

3. Atomistic simulation of damage production by atomic and molecular ion irradiation in GaN;Journal of Applied Physics;2012-08-15

4. Light and heavy ion effects on damage clustering in GaAs quantum wells;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2007-04

5. Damage production in GaAs and GaAsN induced by light and heavy ions;Journal of Applied Physics;2006-09

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