Determination of the surface band bending in InxGa1−xN films by hard x-ray photoemission spectroscopy-Reference-Cited by-同舟云学术

Determination of the surface band bending in InxGa1−xN films by hard x-ray photoemission spectroscopy

Published:2013-02-21 Issue:1 Volume:14 Page:015007
ISSN:1468-6996
Container-title:Science and Technology of Advanced Materials
language:en
Short-container-title:Science and Technology of Advanced Materials

Author:

Lozac'h Mickael¹²,Ueda Shigenori³,Liu Shitao⁴,Yoshikawa Hideki³,Liwen Sang⁵⁶,Wang Xinqiang⁴,Shen Bo⁴,Sakoda Kazuaki¹²,Kobayashi Keisuke³,Sumiya Masatomo⁵⁷

Affiliation:

1. Photonic Materials Unit, National Institute for Materials Science, Tsukuba 305-0044, Japan

2. Doctoral Program in Materials Science and Engineering, Tsukuba University, Tsukuba 305-8573, Japan

3. Synchrotron X-ray Station at SPring-8, National Institute for Materials Science, Hyogo 679-5148, Japan

4. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, People's Republic of China

5. Wide Bandgap Material Group, National Institute for Materials Science, Tsukuba 305-0044, Japan

6. ICYS-MANA, National Institute for Materials Science, Tsukuba 305-0044, Japan

7. JST-ALCA, The Japan Science and Technology Agency, Tokyo 102-0076, Japan

Publisher

Informa UK Limited

Subject

General Materials Science

Link

https://www.tandfonline.com/doi/pdf/10.1088/1468-6996/14/1/015007

Reference33 articles.

1. Unusual properties of the fundamental band gap of InN

2. Deep donor state in InN: Temperature-dependent electron transport in the electron accumulation layers and its influence on Hall-effect measurements