Impact of oxygen on band structure at the Ni/GaN interface revealed by hard X-ray photoelectron spectroscopy-Reference-Cited by-同舟云学术

Impact of oxygen on band structure at the Ni/GaN interface revealed by hard X-ray photoelectron spectroscopy

Published:2021-03-22 Issue:12 Volume:118 Page:121603
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Mizushima Hirotaka¹^ORCID,Arai Ryoji¹,Inaba Yuta¹,Yamashita Shunsuke¹,Yamaguchi Yudai¹,Kanitani Yuya¹,Kudo Yoshihiro¹,Hamaguchi Tatsushi¹,Koda Rintaro¹,Yanashima Katsunori¹,Ohkubo Tadakatsu²^ORCID,Hono Kazuhiro²^ORCID,Tomiya Shigetaka¹

Affiliation:

1. R&D center, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa, 243-0014, Japan

2. National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki, 305-0047, Japan

Funder

Japan Synchrotron Radiation Research Institute

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0033165

Reference30 articles.

1. Abinitiostudy of oxygen point defects in GaAs, GaN, and AlN

2. Magneto-optical studies of free-standing hydride-vapor-phase epitaxial GaN

3. Growth condition dependence of unintentional oxygen incorporation in epitaxial GaN

4. Low-resistance ohmic contacts to p-type GaN achieved by the oxidation of Ni/Au films

5. Effects of annealing in an oxygen ambient on electrical properties of ohmic contacts to p-type GaN

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