Impact of nickel silicide on SiGe BiCMOS devices-Reference-Cited by-同舟云学术

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Impact of nickel silicide on SiGe BiCMOS devices

Published:2018-10-24 Issue:12 Volume:33 Page:124003
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Wolansky Dirk^ORCID,Grabolla Thomas,Lenke Thomas,Schulze Sebastian,Zaumseil Peter

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/33/i=12/a=124003/pdf

Reference10 articles.

1. Progress in the understanding of Ni silicide formation for advanced MOS structures

2. Analysis of irregular increase in sheet resistance of Ni silicides on transition from NiSi to NiSi2

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. In situ TEM study of Ni-silicides formation up to 973K;Journal of Alloys and Compounds;2022-10

2. Direct Visualization of Breakdown-Induced Metal Migration in Enhanced Modified Lateral Silicon-Controlled Rectifiers;IEEE Transactions on Electron Devices;2021-03

3. Nickel Film Deposition with Varying RF Power for the Reduction of Contact Resistance in NiSi;Coatings;2019-05-28

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