Trap state characterization of Al2O3/AlInGaN/GaN metal-insulator-semiconductor heterostructures
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://iopscience.iop.org/article/10.1088/1361-6641/ab1105/pdf
Reference30 articles.
1. Improvement of Power Performance of GaN HEMT by Using Quaternary InAlGaN Barrier
2. High Breakdown ($> \hbox{1500\ V}$) AlGaN/GaN HEMTs by Substrate-Transfer Technology
3. Influence of strain induced by AlN nucleation layer on the electrical properties of AlGaN/GaN heterostructures on Si(111) substrate
4. Lattice and energy band engineering in AlInGaN/GaN heterostructures
5. InAlN/GaN/Si heterostructures and field-effect transistors with lattice matched and tensely or compressively strained InAlN
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