Effect of UV irradiation on the resistive switching characteristics of low-temperature solution-processed ZrO2 RRAM
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1088/1361-6641/ac038e/pdf
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4. Conduction mechanism and synaptic behaviour of interfacial switching AlOσ-based RRAM;Cho;Semicond. Sci. Technol.,2020
5. Multistate data storage in solution-processed NiO-based resistive switching memory;Chu;Semicond. Sci. Technol.,2018
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