XPS investigation of the ALD Al2O3/HgCdTe heterointerface
Author:
Funder
Russian Science Foundation
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://iopscience.iop.org/article/10.1088/1361-6641/ab1961/pdf
Reference21 articles.
1. Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
2. Passivation Effect of Atomic Layer Deposition of Al2O3 Film on HgCdTe Infrared Detectors
3. Mercury cadmium telluride (HgCdTe) passivation by advanced thin conformal Al<sub>2</sub>O<sub>3</sub> films
4. Mercury cadmium telluride surface passivation by the thin alumina film atomic-layer deposition
5. Admittance of MIS structures based on graded-gap MBE HgCdTe with Al2O3insulator
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3. Searching Optimal Growth Parameters for HfO₂ Applied by Plasma-Enhanced Atomic Layer Deposition Method;2022 IEEE 23rd International Conference of Young Professionals in Electron Devices and Materials (EDM);2022-06-30
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5. Admittance of MIS Structures Based on nBn Systems of Epitaxial HgCdTe for Detection in the 3–5 μm Spectral Range;Technical Physics Letters;2021-12-16
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