Admittance of MIS structures based on graded-gap MBE HgCdTe with Al2O3insulator-Reference-Cited by-同舟云学术

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Admittance of MIS structures based on graded-gap MBE HgCdTe with Al2O3insulator

Published:2016-04-14 Issue:7-9 Volume:13 Page:647-650
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi C

Author:

Voitsekhovskii Alexander V.,Nesmelov Sergey N.,Dzyadukh Stanislav M.,Vasil`ev Vladimir V.,Varavin Vasiliy S.,Dvoretsky Sergey A.,Mikhailov Nikolay N.,Yakushev Maxim V.,Sidorov Georgiy Y.

Publisher

Wiley

Subject

Condensed Matter Physics

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of As+ Ion Implantation on Properties of MBE HgCdTe Near-Surface Layer Characterized by Metal–Insulator–Semiconductor Techniques;Journal of Electronic Materials;2021-02-02

2. Electrical and microscopic characterization of p+-type layers formed in HgCdTe by arsenic implantation;Semiconductor Science and Technology;2020-10-06

3. Admittance of metal–insulator–semiconductor devices based on HgCdTe nBn structures;Semiconductor Science and Technology;2020-04-03

4. Investigation of the Effect of Thermal Annealing on the Electrical Properties of the Near-Surface Layer of MBE n-HgCdTe Using MIS Techniques;Journal of Electronic Materials;2020-02-14

5. XPS investigation of the ALD Al2O3/HgCdTe heterointerface;Semiconductor Science and Technology;2019-05-16

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