Abstract
Abstract
Negative capacitance (NC) devices hold great promise for improving subthreshold slope (SS). However, the theoretical exploration of the short-channel effect in NC and two-dimensional (2D) materials remains an ongoing challenge in device scaling. The present work demonstrates a double-gate MoS2 negative capacitance field-effect transistor (MoS2 DG-NCFET) with low power and near-zero drain-induced barrier lowering (DIBL) by exploring its design space considering the impact of various MoS2 layers, with the aid of the developed 2D short-channel model containing the NC effect and numerical simulation. The proposed monolayer MoS2 DG-NCFET model is solved by unifying the long and short channel models coupled with the one-dimensional Landau-Khalatnikov equation. The study indicates that a lower SS, considerable voltage saving (
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), and even the ability to achieve zero DIBL are seen in monolayer MoS2 devices when compared with those of non-2D MoS2, due to the combination of the atomic-scale thickness of channels and the double-gate structure. This study provides an insight for further reducing the feature size of ultralow power transistors.
Funder
National Natural Science Foundation of China
Key project of Science and technology research of Jiangxi Education Department
Doctor starting Fund of Jiangxi University of Science and Technology
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials