n‐Type Dirac‐Source Field‐Effect Transistors Based on a Graphene/Carbon Nanotube Heterojunction-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

n‐Type Dirac‐Source Field‐Effect Transistors Based on a Graphene/Carbon Nanotube Heterojunction

Published:2020-06-09 Issue:7 Volume:6 Page:2000258
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Xiao Mengmeng¹,Lin Yanxia²,Xu Lin¹,Deng Bing³,Peng Hailin³,Peng Lian‐Mao¹,Zhang Zhiyong¹

Affiliation:

1. Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon‐Based ElectronicsDepartment of ElectronicsPeking University Beijing 100871 China

2. Academy for Advanced Interdisciplinary StudiesPeking University Beijing 100871 China

3. Center for NanochemistryBeijing Science and Engineering Center for NanocarbonsBeijing National Laboratory for Molecular SciencesCollege of Chemistry and Molecular EngineeringPeking University Beijing 100871 P. R. China

Funder

National Natural Science Foundation of China

Beijing Municipal Science and Technology Commission

China Postdoctoral Science Foundation

National Basic Research Program of China

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202000258

Reference36 articles.

1. The chips are down for Moore’s law

2. Tunnel field-effect transistors as energy-efficient electronic switches

3. Minimizing power consumption in digital CMOS circuits

4. A Review of Sharp-Switching Devices for Ultra-Low Power Applications

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Lateral graphene/ MoS2 heterostructures for steep-slope Dirac-source field-effect transistors;Physical Review B;2024-09-05

2. Ultimate-scaled one-dimensional transistors: Surpassing the subthreshold swing limit;Computational Materials Today;2024-09

3. Electron-phonon scattering in two-dimensional Dirac-source transistors;Physical Review Applied;2024-08-26

4. The rise of semi-metal electronics;Nature Reviews Electrical Engineering;2024-08-01

5. All-2D-Materials Subthreshold-Free Field-Effect Transistor with Near-Ideal Switching Slope;ACS Nano;2024-07-29

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3