Fully patterned p-channel SnO TFTs using transparent Al2O3 gate insulator and ITO as source and drain contacts
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://iopscience.iop.org/article/10.1088/1361-6641/aaa7a6/pdf
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