Bandgap tuning in GaAs1−xSbxaxial nanowires grown by Ga-assisted molecular beam epitaxy
Author:
Funder
Army Research Office
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/32/i=3/a=035002/pdf
Reference42 articles.
1. Critical dimensions for the plastic relaxation of strained axial heterostructures in free-standing nanowires
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5. Diameter-Dependent Photocurrent in InAsSb Nanowire Infrared Photodetectors
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