Charge-trapping memory based on tri-layer alumina gate stack and InGaZnO channel-Reference-Cited by-同舟云学术

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Charge-trapping memory based on tri-layer alumina gate stack and InGaZnO channel

Published:2020-04-09 Issue:5 Volume:35 Page:055032
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Ma Pengfei^ORCID,Gao Jiacheng,Guo Wenhao,Zhang Guanqun,Wang Yiming,Xin Qian^ORCID,Li Yuxiang^ORCID,Song Aimin^ORCID

Funder

National Key Research and Development Program of China

Engineering and Physical Sciences Research Council

China Postdoctoral Science Foundation

Key Research and Development Program of Shandong Province

Natural Science Foundation of Shandong Province

Fundamental Research Funds of Shandong University

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1088/1361-6641/ab7c7a/pdf

Reference40 articles.

1. Band-alignment dominated retention behaviors in high-k composite charge-trapping memory devices

2. Bit Cost Scalable Technology with Punch and Plug Process for Ultra High Density Flash Memory

3. Three-Dimensional 128 Gb MLC Vertical nand Flash Memory With 24-WL Stacked Layers and 50 MB/s High-Speed Programming

4. In Depth Analysis of 3D NAND Enablers in Gate Stack Integration and Demonstration in 3D Devices

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Device Feasibility of 60-nm-Scaled Vertical-Channel Memory Transistors Using InGaZnO Channel and ZnO Charge-Trap Layers;IEEE Transactions on Electron Devices;2024-03

2. Synaptic Transistor Based on In‐Ga‐Zn‐O Channel and Trap Layers with Highly Linear Conductance Modulation for Neuromorphic Computing;Advanced Electronic Materials;2023-04-14

3. Solution-processed Li-doped ZnSnO metal-semiconductor-metal UV photodetectors;Journal of Physics D: Applied Physics;2021-05-21

4. Evaluating effectiveness of dust by-product treatment with scrubbers to mitigate explosion risk in ZrO2 atomic layer deposition process;Journal of Hazardous Materials;2020-12

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