Epitaxial ZnO gate dielectrics deposited by RF sputter for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors-Reference-Cited by-同舟云学术

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Epitaxial ZnO gate dielectrics deposited by RF sputter for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

Published:2017-12-06 Issue:1 Volume:33 Page:015007
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Yoon Seonno,Lee Seungmin,Kim Hyun-Seop,Cha Ho-Young,Lee Hi-Deok,Oh Jungwoo^ORCID

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://iopscience.iop.org/article/10.1088/1361-6641/aa9b58/pdf

Reference24 articles.

1. GaN-Based RF Power Devices and Amplifiers

2. Normally off AlGaN/GaN HEMT on Si substrate with selectively dry-etched recessed gate and polarization-charge-compensation δ-doped GaN cap layer

3. A Compact 30-W AlGaN/GaN HEMTs on Silicon Substrate With Output Power Density of 8.1 W/mm at 8 GHz

4. High Performance AlGaN∕GaN HEMT with Lattice Matched ZnO Gate Interlayer

5. Basic Properties of ZnO, GaN, and Related Materials

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Epi-Gd2O3/AlGaN/GaN MOS HEMT on 150 mm Si wafer: A fully epitaxial system for high power application;Applied Physics Letters;2019-08-05

2. Recent Progress on High-Capacitance Polymer Gate Dielectrics for Flexible Low-Voltage Transistors;Advanced Functional Materials;2018-09-02

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