Epi-Gd2O3/AlGaN/GaN MOS HEMT on 150 mm Si wafer: A fully epitaxial system for high power application-Reference-Cited by-同舟云学术

Epi-Gd2O3/AlGaN/GaN MOS HEMT on 150 mm Si wafer: A fully epitaxial system for high power application

Published:2019-08-05 Issue:6 Volume:115 Page:063502
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Sarkar Ritam¹,Bhunia S.²,Nag D.¹,Barik B. C.²,Das Gupta K.²^ORCID,Saha D.¹^ORCID,Ganguly S.¹^ORCID,Laha Apurba¹^ORCID,Lemettinen Jori³^ORCID,Kauppinen Christoffer³^ORCID,Kim Iurii³^ORCID,Suihkonen Sami³^ORCID,Gribisch Philipp⁴,Osten Hans-Jörg⁴

Affiliation:

1. Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India

2. Department of Physics, Indian Institute of Technology Bombay, Mumbai 400076, India

3. Department of Electronics and Nanoengineering, Aalto University, P. O. BOX 13500, FI-00076 AALTO, Finland

4. Institute of Electronic Materials and Devices, Leibniz University Hannover, Schneiderberg 32, 30167 Hannover, Germany

Funder

Department of Science and Technology, Ministry of Science and Technology

German Academic Exchange Service New Delhi

Ministry of Electronics and Information technology

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5109861

Reference30 articles.

1. Effect of Gate Leakage in the Subthreshold Characteristics of AlGaN/GaN HEMTs

2. A study on current collapse in AlGaN/GaN HEMTs induced by bias stress

3. Thermal Assessment of AlGaN/GaN MOS-HEMTs on Si Substrate Using Gd2O3 as Gate Dielectric

4. GaN metal-oxide-semiconductor field-effect-transistor with atomic layer deposited Al2O3 as gate dielectric

5. Enhancement in Electron Field Emission of Microcrystalline Diamond Films upon Iron Coating and Annealing Processes

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