Formation of ultra-low resistance contact with nickel stanogermanide/heavily doped n +-Ge1−x Sn x structure-Reference-Cited by-同舟云学术

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Formation of ultra-low resistance contact with nickel stanogermanide/heavily doped n +-Ge1−x Sn x structure

Published:2018-10-24 Issue:12 Volume:33 Page:124001
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Jeon Jihee^ORCID,Suzuki Akihiro,Nakatsuka Osamu,Zaima Shigeaki

Funder

Japan Society for the Promotion of Science

Japan Society for the Promotion of Science (JSPS) and Der Deutsche Akademische Austauschdiens (DAAD) bilateral collaboration-research program

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://iopscience.iop.org/article/10.1088/1361-6641/aae624/pdf

Reference33 articles.

1. Maximizing uniaxial tensile strain in large-area silicon-on-insulator islands on compliant substrates

2. Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors

3. Characterization of locally strained Ge1−xSnx/Ge fine structures by synchrotron X-ray microdiffraction

4. Electronic band structure and effective mass parameters of Ge1-xSnx alloys

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ni-based metallization of GeSn layers: A review and recent advances;Microelectronic Engineering;2023-01

2. Crystalline and optoelectronic properties of Ge_1−xSn _x /high-Si-content-Si _y Ge_1−x−ySn _x double-quantum wells grown with low-temperature molecular beam epitaxy;Semiconductor Science and Technology;2022-12-14

3. Recrystallization and interdiffusion processes in laser-annealed strain-relaxed metastable Ge_0.89Sn_0.11;Journal of Applied Physics;2022-03-14

4. Composition and magnetic properties of thin films grown by interdiffusion of Mn and Sn-Rich, Ge lattice matched SixGe1-x-ySny layers;Journal of Magnetism and Magnetic Materials;2022-03

5. Photoluminescence properties of heavily Sb doped Ge1−x Sn x and heterostructure design favorable for n+-Ge1−x Sn x active layer;Japanese Journal of Applied Physics;2021-12-15

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