Characterization of locally strained Ge1−xSnx/Ge fine structures by synchrotron X-ray microdiffraction-Reference-Cited by-同舟云学术

Characterization of locally strained Ge1−xSnx/Ge fine structures by synchrotron X-ray microdiffraction

Published:2015-05-04 Issue:18 Volume:106 Page:182104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ike Shinichi¹,Nakatsuka Osamu¹,Moriyama Yoshihiko²,Kurosawa Masashi¹,Taoka Noriyuki¹,Imai Yasuhiko³,Kimura Shigeru³^ORCID,Tezuka Tsutomu²,Zaima Shigeaki¹⁴

Affiliation:

1. Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

2. Collaborative Research Team Green Nanoelectronics Center, National Institute of Advanced Industrial Science and Technology, West 7A, Onogawa 16-1, Tsukuba, Ibaraki 305-8569, Japan

3. Japan Synchrotron Radiation Research Institute/SPring-8, Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5198, Japan

4. EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

Funder

Japan Society for the Promotion of Science (JSPS)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4921010

Reference21 articles.

1. Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors