Implantation-free edge termination structures in vertical GaN power diodes
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1088/1361-6641/ab7e43/pdf
Reference41 articles.
1. A Survey of Wide Bandgap Power Semiconductor Devices
2. Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges
3. State of the art of high temperature power electronics
4. Materials and processing issues in vertical GaN power electronics
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1. An Optimized Vertical GaN Parallel Split Gate Trench MOSFET Device Structure for Improved Switching Performance;IEEE Access;2023
2. A Simple Edge Termination Design for Vertical GaN P-N Diodes;IEEE Transactions on Electron Devices;2022-09
3. GaN-on-GaN p-i-n diodes with avalanche capability enabled by eliminating surface leakage with hydrogen plasma treatment;Applied Physics Letters;2022-08-29
4. Design, Fabrication and Characterization of 6.5kV/100A 4H-SiC PiN power rectifier;2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia);2021-08-25
5. Low-leakage kV-class GaN vertical p–n diodes with non-destructive breakdown enabled by hydrogen-plasma termination with p-GaN extension;Semiconductor Science and Technology;2021-06-07
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