Design, Fabrication and Characterization of 6.5kV/100A 4H-SiC PiN power rectifier-Reference-Cited by-同舟云学术

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Design, Fabrication and Characterization of 6.5kV/100A 4H-SiC PiN power rectifier

Published:2021-08-25 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
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Author:

Tao Mengling,Deng Xiaochuan,Hu Rui,Li Xuan,Li Zhiqiang,Lu Hongling

Funder

Science Challenge Project

Key Area Research and Development Project of Guangdong Province

Natural Science Foundation of Guangdong

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9655996/9655997/09656038.pdf?arnumber=9656038

Reference19 articles.

1. A Trench-Field-Plate High-Voltage Power MOSFET

2. Step JTE, an Edge Termination for UHV SiC Power Devices With Increased Tolerances to JTE Dose and Surface Charges

3. V-groove trench gate SiC MOSFET with a double reduced surface field junction termination extensions structure

4. Implantation-free edge termination structures in vertical GaN power diodes

5. Study of Passivation Layer on Bevel Edge Termination for SiC RSD

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A review of the etched terminal structure of a 4H-SiC PiN diode;Journal of Semiconductors;2023-11-01

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