Resistive switching characteristics of UV-assisted room-temperature-fabricated top-electrode-free SnOx ReRAM
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1088/1361-6641/ab92d1/pdf
Reference40 articles.
1. Resistive Random Access Memory (ReRAM) Based on Metal Oxides
2. Review of radiation effects on ReRAM devices and technology
3. Improved Resistive Switching Uniformity in $ \hbox{Cu/HfO}_{2}/\hbox{Pt}$ Devices by Using Current Sweeping Mode
4. Postcycling Degradation in Metal-Oxide Bipolar Resistive Switching Memory
5. Implementation of Complete Boolean Logic Functions in Single Complementary Resistive Switch
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1. Exploration of Analog Synaptic Plasticity and Convolutional Neural Network Simulation in Bilayer TiOxNy/SnOx Memristor for Neuromorphic Systems;ACS Materials Letters;2024-07-09
2. Improved resistive switching characteristics of solution processed ZrO2/SnO2 bilayer RRAM via oxygen vacancy differential;Semiconductor Science and Technology;2024-03-08
3. Tin Oxide Nanorod Array-Based Photonic Memristors with Multilevel Resistance States Driven by Optoelectronic Stimuli;ACS Applied Materials & Interfaces;2023-03-17
4. Forming‐Free Resistive Switching of Electrochemical Titanium Oxide Localized Nanostructures: Anodization, Chemical Composition, Nanoscale Size Effects, and Memristive Storage;Advanced Electronic Materials;2022-04-19
5. Fabrication of solution-processed SnO2–Based flexible ReRAM using laser-induced graphene transferred onto PDMS;Current Applied Physics;2021-05
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