GaN metal-oxide-semiconductor high-electron-mobility transistors using thermally evaporated SiO as the gate dielectric-Reference-Cited by-同舟云学术

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GaN metal-oxide-semiconductor high-electron-mobility transistors using thermally evaporated SiO as the gate dielectric

Published:2018-08-28 Issue:9 Volume:33 Page:095023
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Zhu Gengchang^ORCID,Wang Yiming,Xin Qian^ORCID,Xu Mingsheng,Chen Xiufang,Xu Xiangang,Feng Xianjin,Song Aimin^ORCID

Funder

National Key Research and Development Program of China

Engineering and Physical Sciences Research Council

National Natural Science Foundation of China

Key Research and Development Program of Shandong Province, China

CAEP THz Science and Technology Foundation

Suzhou Planning Projects of Science and Technology

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://iopscience.iop.org/article/10.1088/1361-6641/aad8d7/pdf

Reference52 articles.

1. Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications

2. High-Linearity AlGaN/GaN FinFETs for Microwave Power Applications

3. The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs

4. High Breakdown Voltage Undoped AlGaN–GaN Power HEMT on Sapphire Substrate and Its Demonstration for DC–DC Converter Application

5. Effect of the surface and barrier defects on the AlGaN/GaN HEMT low-frequency noise performance

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1. TCAD Investigation for Dual-Gate MISHEMT with Improved Linearity and Current Collapse for LNAs;IETE Technical Review;2021-11-21

2. An in situ monitored and controlled etch process to suppress Mg memory effects in MOCVD GaN growth on Si substrate;Semiconductor Science and Technology;2019-11-08

3. A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability;Electronics;2018-12-03

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