Design and simulation of high-speed and low-power memcapacitor-based nonvolatile static cells using FinFET transistors
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1088/1361-6641/abf7d4/pdf
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4. A 7T-SRAM with data-write technique by capacitive coupling;Takashima;IEEE J. Solid-State Circuits,2018
5. Carbon nanotube-based CMOS SRAM: 1 kbit 6T SRAM arrays and 10T SRAM cells;Kanhaiya;IEEE Trans. Electron Devices,2019
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A single ended, single port configuration based 9 T SRAM cell for stability enhancement;Physica Scripta;2023-10-23
2. Hybrid FinFET - Memristor based digital circuits for low power IC applications;Materials Today: Proceedings;2023-10
3. A novel design of high performance and robust ultra-low power SRAM cell based on memcapacitor;Nanotechnology;2022-01-24
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