An Ultra-Low-Power and Robust Ternary Static Random Access Memory Cell Based on Carbon Nanotube FETs-Reference-Cited by-同舟云学术

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An Ultra-Low-Power and Robust Ternary Static Random Access Memory Cell Based on Carbon Nanotube FETs

Published:2018-04-01 Issue:4 Volume:13 Page:617-627
ISSN:1555-130X
Container-title:Journal of Nanoelectronics and Optoelectronics
language:en
Short-container-title:Journal of Nanoelectronics and Optoelectronics

Author:

Moaiyeri Mohammad Hossein,Akbari Hamed,Moghaddam Majid

Publisher

American Scientific Publishers

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ultra-Low Power 9T FinFET Based SRAM Cell for IoT Applications;Journal of Electrical Systems;2024-04-24

2. Single-End Half-Select Free Static RAM Cell Based on BWG CNFET Tri-value Buffer Gate Applicable in Highly Efficient IoT Platforms;Arabian Journal for Science and Engineering;2024-02-08

3. Design and Performance Prediction of Ternary SRAM Cells Using GAA CNTFETS for Low Power Applications;2023 3rd Asian Conference on Innovation in Technology (ASIANCON);2023-08-25

4. Ternary SRAM circuit designs with CNTFETs;International Journal of Circuit Theory and Applications;2023-03-28

5. An SEU-hardened ternary SRAM design based on efficient ternary C-elements using CNTFET technology;Microelectronics Reliability;2023-01

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