Design of selective-area growth compatible fully-vertical GaN p-i-n diodes with dielectric vertical sidewall appended edge termination schemes
Author:
Funder
Office of Naval Research
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1088/1361-6641/abdd08/pdf
Reference60 articles.
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4. High voltage and high current density vertical GaN power diodes;Armstrong;Electron. Lett.,2016
5. High voltage, high current, GaN–on–GaN p-n diodes with partially compensated edge termination;Wang;Appl. Phys. Lett.,2018
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1. Design of PAMBE-based selective-area growth compliant ultra-low leakage GaN mixed-conduction vertical diodes for high-power applications;Semiconductor Science and Technology;2021-05-05
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