Time of carrier escape and recombination coefficients in InGaN quantum-well active regions of blue, cyan, and green light-emitting diodes
Author:
Funder
Lietuvos Mokslo Taryba
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/34/i=1/a=015007/pdf
Reference25 articles.
1. LEDs for Solid-State Lighting: Performance Challenges and Recent Advances
2. Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies
3. The efficiency challenge of nitride light-emitting diodes for lighting
4. ABC-model for interpretation of internal quantum efficiency and its droop in III-nitride LEDs: a review
5. Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes
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3. Temperature and intensity dependence of the open-circuit voltage of InGaN/GaN multi-quantum well solar cells;Solar Energy Materials and Solar Cells;2021-09
4. Review—The Physics of Recombinations in III-Nitride Emitters;ECS Journal of Solid State Science and Technology;2019-12-13
5. Thermal droop in high-quality InGaN LEDs;Applied Physics Letters;2019-11-25
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