Conduction mechanisms of the reverse leakage current of 4H-SiC Schottky barrier diodes
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://iopscience.iop.org/article/10.1088/1361-6641/aaf8cb/pdf
Reference30 articles.
1. Design and optimization of junction termination extension (JTE) for 4H–SiC high voltage Schottky diodes
2. Current SiC technology for power electronic devices beyond Si
3. Material science and device physics in SiC technology for high-voltage power devices
4. Reverse leakage current calculations for SiC Schottky contacts
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Conduction mechanism of Schottky contacts fabricated on etch pits originating from single threading dislocation in a highly Si-doped HVPE GaN substrate;Materials Science in Semiconductor Processing;2023-11
2. 4H–SiC floating junction Schottky barrier diode with compensation layer of engineered cathode structure: Cone-shaped electric field, current density waveform, and applications;Microelectronics Journal;2022-07
3. Numerical analysis of the GaN trench MIS barrier Schottky diodes with high dielectric reliability and surge current capability;AIP Advances;2022-06-01
4. Exploration of switching characteristics of 4H-SiC floating junction Schottky barrier diodes with stronger blocking voltage capability;Journal of Power Electronics;2021-07-12
5. A Highly Sensitive and Robust GaN Ultraviolet Photodetector Fabricated on 150-mm Si (111) Wafer;IEEE Transactions on Electron Devices;2021-06
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3