Comparative analysis of efficiency droop in InGaN/GaN light- emitting diodes for electrical and optical pumping conditions
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/541/i=1/a=012055/pdf
Reference7 articles.
1. Temperature Dependence of the Quantum Efficiency of Structures with Multiple Quantum Wells InGaN / GaN Under Photo- and Electroluminescence
2. The effect of base thickness on the reverse volt–ampere characteristic of an S-diode
3. Switching avalanche S-diodes based on GaAs multilayer structures
4. Tunnel injection and power efficiency of InGaN/GaN light-emitting diodes
5. Optical properties of InGaN quantum wells
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The influence of the deep level type on a switching time delay of GaAs avalanche S-diodes;Journal of Physics: Conference Series;2018-12
2. Diffusion of Magnesium in Led Structures with InGaN/GaN Quantum Wells at True Growth Temperatures 860–980°C of p-GaN;Russian Physics Journal;2018-05
3. Compound Semiconductors;2017-10-06
4. References;Compound Semiconductors;2017-10-06
5. Effect of Droop Phenomenon in InGaN/GaN Blue Laser Diodes on Threshold Current;Chinese Physics Letters;2017-08
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3